Manufacturer Part Number
PCP1405-TD-H
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor for efficient power conversion and control applications.
Product Features and Performance
High drain-source breakdown voltage (250V)
Low on-resistance (Rds(on) as low as 4.5 ohms)
High current capability (600mA continuous drain current)
Low gate charge (2.1nC) for efficient switching
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent performance for power conversion and control
Efficient switching and low power losses
Suitable for a variety of applications due to wide voltage and temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±10V
On-Resistance (Rds(on)): 4.5 ohms @ 4.5V, 600mA
Drain Current (ID): 600mA continuous
Input Capacitance (Ciss): 140pF
Power Dissipation: 3.5W
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Compatibility
Suitable for a wide range of power conversion and control circuits
Application Areas
Power supplies
Motor drives
Lighting controls
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Key Reasons to Choose This Product
High performance and efficiency for power conversion and control
Robust design for reliable operation in demanding applications
Wide voltage and temperature range for design flexibility
Cost-effective solution for high-volume applications
PCP1405AMI Semiconductor/onsemi