Manufacturer Part Number
PCP1302-TD-H
Manufacturer
onsemi
Introduction
P-Channel MOSFET transistor designed for power management and control applications
Product Features and Performance
Drain to Source Voltage (Vdss) of 60V
Vgs (Max) of ±20V
Rds On (Max) of 266mOhm @ 1.5A, 10V
Continuous Drain Current (Id) of 3A at 25°C
Input Capacitance (Ciss) of 262 pF @ 20V
Power Dissipation (Max) of 3.5W at Tc
Gate Charge (Qg) of 6.4 nC @ 10V
Product Advantages
Suitable for power management and control applications
Low on-resistance for efficient power delivery
High voltage and current handling capability
Small surface mount package
Key Technical Parameters
MOSFET technology
P-Channel FET type
Vgs(th) (Max) of 2.6V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) of 4V, 10V
Operating Temperature up to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Suitable for Tape & Reel (TR) packaging
Compatibility
Compatible with various power management and control applications
Application Areas
Power supplies
Motor drives
Battery chargers
Industrial controls
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent performance characteristics for power management and control
Compact surface mount package for efficient board space utilization
Reliable operation over a wide temperature range
RoHS3 compliance for environmental responsibility