Manufacturer Part Number
P2N2222ARL1G
Manufacturer
onsemi
Introduction
The P2N2222ARL1G is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of common electronic applications.
Product Features and Performance
High frequency operation up to 300 MHz
Low collector-emitter saturation voltage of 1V @ 50 mA, 500 mA
High current capability up to 600 mA
Wide operating temperature range of -55°C to 150°C
Small TO-92 (TO-226) package
Product Advantages
Excellent high-frequency performance
High current handling capability
Wide operating temperature range
Small and compact package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 40 V
Collector Current (Max): 600 mA
Collector Cutoff Current (Max): 10 nA
DC Current Gain (Min): 100 @ 150 mA, 10 V
Power Dissipation (Max): 625 mW
Quality and Safety Features
Tested and qualified to industrial standards
RoHS-compliant and lead-free construction
Compatibility
Widely compatible with common electronic circuits and applications
Application Areas
General-purpose amplifier and switch applications
Household electronics
Industrial control systems
Automotive electronics
Product Lifecycle
This is an established and widely available product, not nearing discontinuation
Replacement and upgrade options are readily available from onsemi and other manufacturers
Several Key Reasons to Choose This Product
Excellent high-frequency performance for various signal processing applications
High current handling capability for power-hungry circuits
Wide operating temperature range for use in diverse environments
Small and compact package for space-constrained designs
Proven reliability and quality from a trusted manufacturer