Manufacturer Part Number
NVTR0202PLT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
-55°C to 150°C operating temperature range
20V drain-source voltage
±20V gate-source voltage
800mΩ maximum on-resistance at 200mA, 10V
400mA continuous drain current at 25°C
70pF maximum input capacitance at 5V
225mW maximum power dissipation
18nC maximum gate charge at 10V
Product Advantages
Automotive-grade AEC-Q101 qualified
RoHS3 compliant
Compact SOT-23-3 (TO-236) package
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 800mΩ @ 200mA, 10V
Drain Current (Id): 400mA @ 25°C
Input Capacitance (Ciss): 70pF @ 5V
Power Dissipation (Pd): 225mW
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for surface mount applications
Application Areas
Automotive electronics
General-purpose switching and control
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
Automotive-grade quality and reliability
Wide operating temperature range
Low on-resistance for efficient switching
Compact SOT-23-3 package for space-constrained designs
RoHS3 compliance for environmental responsibility