Manufacturer Part Number
NVTR01P02LT1G
Manufacturer
onsemi
Introduction
The NVTR01P02LT1G is a P-channel enhancement-mode MOSFET device from onsemi, suitable for a variety of automotive and industrial applications.
Product Features and Performance
20V Drain-Source Voltage
3A Continuous Drain Current at 25°C
220mΩ Maximum On-Resistance at 750mA, 4.5V
225pF Maximum Input Capacitance at 5V
400mW Maximum Power Dissipation
P-Channel MOSFET Technology
Product Advantages
Robust and reliable automotive-grade device
Low on-resistance for efficient power switching
Compact SOT-23-3 package for space-constrained designs
AEC-Q101 qualified for harsh automotive environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 220mΩ @ 750mA, 4.5V
Drain Current (Id): 1.3A @ 25°C
Input Capacitance (Ciss): 225pF @ 5V
Power Dissipation: 400mW
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Power management
Motor control
Switching circuits
General-purpose power switching
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Robust and reliable automotive-grade design
Low on-resistance for efficient power switching
Compact SOT-23-3 package for space-constrained designs
AEC-Q101 qualified for harsh automotive environments
RoHS3 compliance for environmentally-friendly applications