Manufacturer Part Number
NVMYS8D0N04CTWG
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor designed for automotive applications
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
40V drain-source voltage (Vdss)
Low on-resistance (Rds(on)) of 8.1mΩ @ 15A, 10V
High continuous drain current (Id) of 16A (Ta), 49A (Tc)
Fast switching performance with low gate charge (Qg) of 10nC @ 10V
High power dissipation of 3.8W (Ta), 38W (Tc)
Product Advantages
Excellent thermal management for high-power automotive applications
Reliable operation in harsh environments
Efficient power delivery with low conduction losses
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.1mΩ @ 15A, 10V
Continuous Drain Current (Id): 16A (Ta), 49A (Tc)
Input Capacitance (Ciss): 625pF @ 25V
Gate Charge (Qg): 10nC @ 10V
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for a wide range of automotive and industrial power electronics applications
Application Areas
Automotive electronics (e.g., engine control, power steering, infotainment)
Industrial power conversion and control systems
Switched-mode power supplies
Motor drives
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability
Reliable operation in harsh automotive environments
Efficient power delivery with low conduction losses
Compatibility with a wide range of automotive and industrial applications
AEC-Q101 qualification and RoHS3 compliance for quality and safety assurance
