Manufacturer Part Number
NVMS5P02R2G
Manufacturer
onsemi
Introduction
P-Channel MOSFET in 8-SOIC package for automotive and industrial applications
Product Features and Performance
Low on-resistance (RDS(on) of 33 mΩ)
High current capability (continuous drain current of 3.95 A)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (1900 pF)
Low gate charge (35 nC)
Product Advantages
Optimized for high efficiency and low power dissipation
Suitable for automotive and industrial applications
Small and compact 8-SOIC package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20 V
Gate-to-Source Threshold Voltage (VGS(th)): 1.25 V
On-Resistance (RDS(on)): 33 mΩ
Input Capacitance (Ciss): 1900 pF
Gate Charge (Qg): 35 nC
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for surface mount applications
Application Areas
Automotive electronics
Industrial power supplies
Motor control
Battery management systems
Product Lifecycle
This product is currently in production and has no plans for discontinuation.
Replacements and upgrades may be available in the future.
Several Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance and high current capability
Robust design for automotive and industrial applications
Small and compact 8-SOIC package for space-constrained designs
Proven reliability and quality with AEC-Q101 qualification
