Manufacturer Part Number
NVMFS6H824NLT1G
Manufacturer
onsemi
Introduction
N-channel MOSFET power transistor
Designed for automotive and industrial applications
Product Features and Performance
80V drain-source voltage
20A continuous drain current at 25°C ambient
110A continuous drain current at 25°C case
4mΩ maximum on-resistance at 20A, 10V
2900pF maximum input capacitance at 40V
8W power dissipation at 25°C ambient
116W power dissipation at 25°C case
Product Advantages
Low on-resistance for high efficiency
High current capability
Wide operating temperature range
Automotive-qualified (AEC-Q101)
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4mΩ
Continuous Drain Current (Id): 20A (Ta), 110A (Tc)
Input Capacitance (Ciss): 2900pF
Power Dissipation: 3.8W (Ta), 116W (Tc)
Quality and Safety Features
RoHS3 compliant
Automotive-qualified (AEC-Q101)
Compatibility
Suitable for automotive and industrial applications
Application Areas
Power supply circuits
Motor control
Industrial automation
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available
Key Reasons to Choose
High current and power handling capability
Low on-resistance for efficient operation
Wide operating temperature range
Automotive-qualified for reliability
RoHS3 compliance for environmental responsibility