Manufacturer Part Number
NTTFS3A08PZTWG
Manufacturer
onsemi
Introduction
High-performance P-Channel MOSFET transistor
Product Features and Performance
20V Drain-Source Voltage (Vdss)
7mΩ maximum On-Resistance (Rds(on)) at 12A, 4.5V
9A continuous Drain Current (Id) at 25°C
5000pF maximum Input Capacitance (Ciss) at 10V
840mW maximum Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Wide operating temperature range
Key Technical Parameters
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package (8-WDFN, 3.3x3.3mm)
Application Areas
Switching power supplies
Motor drives
Battery management systems
Industrial controls
Product Lifecycle
Active and available
Several Key Reasons to Choose This Product
Excellent power efficiency with low on-resistance
High current handling capability
Wide operating temperature range
Compact surface mount package
RoHS3 compliance for environmental safety
