NTTFS1D8N02P1E - onsemi

Manufacturer Part Number

NTTFS1D8N02P1E

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

Operates in the -55°C to 150°C temperature range

25V drain-to-source voltage rating

Low on-resistance of 1.3 milliohms

Capable of 20A continuous drain current (Ta) and 152A (Tc)

Input capacitance of 3159 pF at 13V

800mW maximum power dissipation (Ta) and 48W (Tc)

N-channel MOSFET technology

Product Advantages

Excellent performance in high-power, high-efficiency applications

Compact 8-PQFN (3.3x3.3) package

Supports surface mount assembly

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 25V

Gate-to-Source Voltage (Vgs): +16V/-12V

On-Resistance (Rds(on)): 1.3 milliohms

Drain Current (Id): 20A (Ta), 152A (Tc)

Input Capacitance (Ciss): 3159 pF

Power Dissipation: 800mW (Ta), 48W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount design

Application Areas

Power management

Motor control

Industrial equipment

Automotive electronics

Product Lifecycle

Current product, no discontinuation or upgrade information available

Several Key Reasons to Choose This Product

Excellent performance in high-power, high-efficiency applications

Compact 8-PQFN (3.3x3.3) package for space-constrained designs

Supports high current and power handling capabilities

Wide operating temperature range of -55°C to 150°C

Surface mount design for efficient assembly