NTMS4916NR2G - onsemi

Manufacturer Part Number

NTMS4916NR2G

Manufacturer

onsemi

Introduction

This device is a discrete N-channel MOSFET transistor designed for efficient power switching applications.

Product Features and Performance

30V drain-to-source voltage rating

Low on-resistance of 9mOhm @ 12A, 10V

Continuous drain current of 7.8A at 25°C

Input capacitance of 1376pF at 25V

Power dissipation of 890mW at 25°C

Product Advantages

Excellent power efficiency due to low on-resistance

Capable of handling high continuous current

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 2.5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg): 15nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

8-SOIC surface mount package

Compatibility

This MOSFET is compatible with a wide range of power supply and motor control applications.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Battery-powered devices

Product Lifecycle

This product is currently in production and available. No discontinuation or replacement is planned at this time.

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

High continuous current capability

Wide operating temperature range

Compact surface mount package

RoHS3 compliance for environmentally-conscious designs