Manufacturer Part Number
NTMS4816NR2G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
10mΩ Maximum On-Resistance (Rds(on)) @ 9A, 10V
8A Continuous Drain Current (Id) @ 25°C
1060pF Maximum Input Capacitance (Ciss) @ 25V
780mW Maximum Power Dissipation (Ta)
3nC Maximum Gate Charge (Qg) @ 10V
-55°C to 150°C Operating Temperature Range
Product Advantages
Efficient power handling
Compact surface mount package
Suitable for a variety of applications
Key Technical Parameters
MOSFET Technology
8-SOIC Package
Tape & Reel Packaging
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Power management circuits
Switching circuits
Motor control
General-purpose electronic applications
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose This Product
Excellent power handling capabilities
Compact and efficient package
Wide operating temperature range
Suitable for diverse electronic applications