Manufacturer Part Number
NTMFS4899NFT1G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Part of onsemi's discrete semiconductor product portfolio
Product Features and Performance
Optimized for high-frequency, high-efficiency power conversion applications
Low on-resistance (RDS(ON)) of 5 mΩ @ 30 A, 10 V
High current capability of 10.4 A (Ta) and 75 A (Tc)
Wide operating temperature range of -55°C to 150°C
Low gate charge (Qg) of 25 nC @ 10 V
Product Advantages
Efficient power conversion with low conduction losses
Compact and space-saving design with 5-DFN (5x6) (8-SOFL) package
Reliable performance across a wide range of operating conditions
Key Technical Parameters
Drain to Source Voltage (VDS): 30 V
Gate to Source Voltage (VGS): ±20 V
Input Capacitance (CISS): 1600 pF @ 12 V
Power Dissipation (Max): 920 mW (Ta), 48 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount design
Tape and reel packaging for automated assembly
Application Areas
Switching power supplies
Power conversion in industrial, consumer, and automotive electronics
Motor drives
Lighting ballasts
Product Lifecycle
Current product offering
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
Excellent power efficiency and performance characteristics
Compact and space-saving design
Wide operating temperature range and high reliability
Suitable for a variety of power conversion applications
Compatibility with automated assembly processes
