Manufacturer Part Number
NTMFS4897NFT1G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor for power management and control applications
Product Features and Performance
30V drain-source voltage rating
Ultra-low on-resistance of 2mΩ @ 22A, 10V
Continuous drain current of 17A at 25°C ambient temperature
950mW power dissipation at 25°C ambient temperature
2W power dissipation at 25°C case temperature
Fast switching speed
Low gate charge of 83.6nC @ 10V
Product Advantages
Efficient power conversion and control
Compact package for space-constrained designs
High power density
Key Technical Parameters
Drain-source voltage (Vdss): 30V
Gate-source voltage (Vgs) max: ±20V
On-resistance (Rds(on)) max: 2mΩ @ 22A, 10V
Continuous drain current (Id): 17A @ 25°C ambient, 171A @ 25°C case
Input capacitance (Ciss) max: 5660pF @ 15V
Gate charge (Qg) max: 83.6nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C junction temperature
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Lighting controls
Automotive electronics
Industrial automation
Product Lifecycle
Current production part, no plans for discontinuation
Replacements and upgrades available if needed
Key Reasons to Choose This Product
Ultra-low on-resistance for high efficiency
High power density in compact package
Fast switching performance for precise control
Robust design for high-temperature operation
Proven reliability and performance in a wide range of applications
