Manufacturer Part Number
NTE4153NT1G
Manufacturer
onsemi
Introduction
This is an N-channel MOSFET transistor from onsemi, a leading semiconductor manufacturer.
Product Features and Performance
Operates at temperatures from -55°C to 150°C
20V drain-to-source voltage rating
Maximum gate-to-source voltage of ±6V
On-resistance as low as 230mΩ @ 600mA, 4.5V
Continuous drain current up to 915mA at 25°C
Input capacitance of 110pF @ 16V
Maximum power dissipation of 300mW
Product Advantages
Low on-resistance for efficient power switching
Wide temperature range for diverse applications
Small SC-89 surface-mount package for compact designs
RoHS compliant for environmental compatibility
Key Technical Parameters
MOSFET technology
N-channel FET type
Gate threshold voltage of 1.1V @ 250μA
Gate drive voltage range of 1.5V to 4.5V
Maximum gate charge of 1.82nC @ 4.5V
Quality and Safety Features
RoHS3 compliant for restricted substances
Packaged in tape and reel for automated assembly
Compatibility
This MOSFET is a direct replacement for the NTE4153 base product number.
Application Areas
Power switching circuits
Motor control
Battery-powered devices
Industrial and consumer electronics
Product Lifecycle
The NTE4153NT1G is an active product, and onsemi continues to manufacture and support it. Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance
Wide operating temperature range for versatile applications
Small, surface-mount package for compact designs
RoHS compliance for environmental responsibility
Readily available in tape and reel packaging
NTE4151PT1G MOSAMI Semiconductor/onsemi