Manufacturer Part Number
NTE4151PT1G
Manufacturer
onsemi
Introduction
P-channel enhancement-mode MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low on-resistance (Rds(on)) of 360mΩ
High continuous drain current (Id) of 760mA
Low input capacitance (Ciss) of 156pF
Low power dissipation of 313mW
Product Advantages
Excellent switching performance
Compact surface-mount package
Suitable for a variety of power management and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±6V
Threshold Voltage (Vgs(th)): 1.2V
Gate Charge (Qg): 2.1nC
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with various power management and control circuits
Application Areas
Power management
Motor control
Switching circuits
Amplifier circuits
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent switching performance and efficiency
Wide operating temperature range
Compact surface-mount package
Reliable and durable construction
Suitable for a variety of power management and control applications
NTE4151PT1G MOSAMI Semiconductor/onsemi