NTD6416ANLT4G - onsemi

Manufacturer Part Number

NTD6416ANLT4G

Manufacturer

onsemi

Introduction

The NTD6416ANLT4G is a high-performance, N-channel MOSFET transistor in a TO-252-3 (DPak) package, designed for a wide range of power management and switching applications.

Product Features and Performance

100V Drain-to-Source Voltage (Vdss)

19A Continuous Drain Current (Id) at 25°C

74mΩ Maximum On-Resistance (Rds(on)) at 19A, 10V

1000pF Input Capacitance (Ciss) at 25V

71W Power Dissipation (Pd) at 25°C

Wide Operating Temperature Range: -55°C to 175°C

Product Advantages

High efficiency and low power loss

Compact and space-saving DPak package

Suitable for various power management and switching applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 74mΩ @ 19A, 10V

Threshold Voltage (Vgs(th)): 2.2V @ 250A

Gate Charge (Qg): 40nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature and harsh environments

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

The NTD6416ANLT4G is an active product and not nearing discontinuation.

Replacement or upgrade options may be available, but consulting with the manufacturer is recommended.

Several Key Reasons to Choose This Product

High efficiency and low power loss for improved system performance

Compact DPak package for space-saving design

Suitable for a wide range of power management and switching applications

Reliable operation in high-temperature and harsh environments

RoHS3 compliance for environmental responsibility