Manufacturer Part Number
NTD6415ANLT4G
Manufacturer
onsemi
Introduction
This product is a single N-Channel MOSFET transistor from onsemi, suitable for various power electronics and switching applications.
Product Features and Performance
100V drain-to-source voltage rating
Maximum 23A continuous drain current at 25°C
On-resistance as low as 52mΩ at 10A, 10V
Input capacitance of 1024pF at 25V
Maximum power dissipation of 83W at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent performance characteristics for power switching applications
Low on-resistance for efficient power conversion
High voltage and current handling capabilities
Compact DPAK package for space-constrained designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 2V at 250A
On-Resistance (Rds(on)): 52mΩ at 10A, 10V
Gate Charge (Qg): 35nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power electronics and switching circuits
Application Areas
Power supplies
Motor drives
Switching power converters
Industrial automation and control
Automotive electronics
Product Lifecycle
Currently in active production
No indication of imminent discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
Excellent performance characteristics for efficient power switching
Wide voltage and current handling capabilities
Compact and space-saving DPAK package
Proven reliability and quality from onsemi
Suitability for a wide range of power electronics applications
NTD6415ANAMI Semiconductor/onsemi