Manufacturer Part Number
NTD60N02RT4G
Manufacturer
onsemi
Introduction
The NTD60N02RT4G is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power switching and control applications.
Product Features and Performance
25V drain-to-source voltage rating
5mΩ maximum on-resistance at 20A, 10V
5A continuous drain current at 25°C ambient temperature
32A continuous drain current at 25°C case temperature
1330pF maximum input capacitance
25W maximum power dissipation at 25°C ambient temperature
58W maximum power dissipation at 25°C case temperature
Product Advantages
Excellent on-resistance performance for efficient power switching
High current handling capability for demanding applications
Wide operating temperature range of -55°C to 175°C
Compact DPAK surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10.5mΩ @ 20A, 10V
Continuous Drain Current (Id): 8.5A (Ta), 32A (Tc)
Input Capacitance (Ciss): 1330pF @ 20V
Power Dissipation: 1.25W (Ta), 58W (Tc)
Quality and Safety Features
Manufactured using onsemi's proven MOSFET technology
Compliance with industry safety and quality standards
Compatibility
Compatible with a wide range of power electronics and control systems
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent on-resistance performance for efficient power switching
High current handling capability for demanding applications
Wide operating temperature range for versatile use
Compact DPAK package for space-constrained designs
Manufactured by a trusted industry leader, onsemi