Manufacturer Part Number
NTD60N02RG
Manufacturer
onsemi
Introduction
This product is a single N-Channel MOSFET transistor in a DPAK package.
Product Features and Performance
Operating temperature range of -55°C to 175°C (TJ)
Drain to source voltage (Vdss) of 25V
Maximum gate-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 10.5mΩ @ 20A, 10V
Continuous drain current (Id) of 8.5A (Ta), 32A (Tc)
Input capacitance (Ciss) of 1330pF @ 20V
Power dissipation of 1.25W (Ta), 58W (Tc)
N-channel MOSFET technology
Gate threshold voltage (Vgs(th)) of 2V @ 250A
Product Advantages
Excellent on-resistance performance for efficient power switching
Wide operating temperature range for diverse applications
Compact DPAK surface mount package for space-saving design
Key Technical Parameters
Drain to source voltage (Vdss): 25V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 10.5mΩ @ 20A, 10V
Continuous drain current (Id): 8.5A (Ta), 32A (Tc)
Input capacitance (Ciss): 1330pF @ 20V
Power dissipation: 1.25W (Ta), 58W (Tc)
Gate threshold voltage (Vgs(th)): 2V @ 250A
Quality and Safety Features
Robust MOSFET design for reliable performance
Complies with relevant safety and quality standards
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Battery chargers
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely available MOSFET solution from onsemi.
Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Excellent on-resistance performance for efficient power switching
Wide operating temperature range for diverse applications
Compact DPAK surface mount package for space-saving design
Robust MOSFET design for reliable performance
Suitable for a wide range of power switching and control applications
NTD5P06VAMI Semiconductor/onsemi
NTD60N02R-1GonsemiMOSFET N-CH 25V 8.5A/32A IPAK