Manufacturer Part Number
NTD4810NT4G
Manufacturer
onsemi
Introduction
This part is a high-performance N-channel MOSFET transistor designed for power switching and control applications.
Product Features and Performance
Operates over a wide temperature range of -55°C to 175°C
Supports a drain-to-source voltage up to 30V
Extremely low on-resistance of 10mΩ @ 30A, 10V
High continuous drain current of 9A at 25°C ambient and 54A at 25°C case temperature
Low input capacitance of 1350pF @ 12V
Maximum power dissipation of 1.4W at 25°C ambient and 50W at 25°C case temperature
Product Advantages
High efficiency power switching
Compact DPAK surface mount package
Excellent thermal performance
Suitable for a wide range of power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10mΩ @ 30A, 10V
Continuous Drain Current (Id): 9A @ 25°C (Ta), 54A @ 25°C (Tc)
Input Capacitance (Ciss): 1350pF @ 12V
Power Dissipation (Ptot): 1.4W @ 25°C (Ta), 50W @ 25°C (Tc)
Quality and Safety Features
Manufactured using robust MOSFET technology
Complies with RoHS and REACH requirements for environmental safety
Compatibility
Suitable for a wide range of power management, motor control, and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Wide operating temperature range
Compact surface mount DPAK package
High power handling capability
Robust and reliable MOSFET design
Suitable for a variety of power management applications
NTD4813NHT4G MOSAMI Semiconductor/onsemi