Manufacturer Part Number
NTD4809NT4G
Manufacturer
onsemi
Introduction
High-voltage, high-power N-channel MOSFET transistor with low on-resistance and fast switching speed.
Product Features and Performance
Optimized for high-power, high-frequency switching applications
Extremely low on-resistance for high efficiency
Fast switching speed for high-frequency operation
High voltage rating up to 30V
Wide operating temperature range (-55°C to 175°C)
Compact DPAK surface-mount package
Product Advantages
Excellent thermal management and power dissipation
Efficient power conversion and low power loss
Reliable and durable performance
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9mΩ @ 30A, 10V
Drain Current (Id): 9.6A (Ta), 58A (Tc)
Input Capacitance (Ciss): 1456pF @ 12V
Power Dissipation: 1.4W (Ta), 52W (Tc)
Quality and Safety Features
Robust MOSFET design for high reliability
Complies with industry safety and quality standards
Rigorous testing and screening for consistent performance
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Compatible with various power supply, motor control, and industrial control systems
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Telecommunication equipment
Product Lifecycle
Current production model, no discontinuation plans
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and power handling capability
Fast switching speed for high-frequency operation
Compact and thermally efficient package design
Wide operating temperature range for versatile applications
Proven reliability and consistent performance
Availability of replacement parts and technical support from the manufacturer
