Manufacturer Part Number
NTD12N10T4G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor
Designed for power management and control applications
Product Features and Performance
Operating temperature range: -55°C to 175°C
High drain-to-source voltage: 100V
Low on-resistance: 165mΩ @ 6A, 10V
High current capability: 12A continuous drain current
Low input capacitance: 550pF @ 25V
High power dissipation: 1.28W (Ta), 56.6W (Tc)
Product Advantages
Robust and reliable performance
Efficient power delivery
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 165mΩ @ 6A, 10V
Drain Current (Id): 12A continuous
Input Capacitance (Ciss Max): 550pF @ 25V
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
Quality and Safety Features
Designed for reliable and safe operation
Meets stringent quality standards
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and surface-mountable package
Wide operating temperature range
Robust and reliable performance
Meets high-quality standards