Manufacturer Part Number
NTD12N10-1G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Operates in temperature range of -55°C to 175°C
Capable of handling up to 100V drain-to-source voltage
Maximum gate-to-source voltage of ±20V
Low on-resistance of 165mΩ @ 6A, 10V
Continuous drain current of 12A at 25°C
Input capacitance of 550pF @ 25V
Maximum power dissipation of 1.28W at 25°C, 56.6W at case temperature
Product Advantages
Excellent thermal performance
Low on-resistance for efficient power handling
Wide operating temperature range
Reliable and robust design
Key Technical Parameters
MOSFET technology
N-Channel FET type
Gate threshold voltage of 4V @ 250A
Gate charge of 20nC @ 10V
Quality and Safety Features
Tested and qualified to industrial standards
Reliable through-hole mounting
Robust I-PAK package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
Currently available, no known end-of-life plans
Several Key Reasons to Choose This Product
Excellent thermal performance and power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Reliable and robust design for industrial and automotive use
Compatibility with various power electronics circuits and systems