NSVUMC5NT1G - onsemi

Manufacturer Part Number

NSVUMC5NT1G

Manufacturer

onsemi

Introduction

Dual-Transistor Arrays with Pre-Biased Resistors

Product Features and Performance

Pre-biased NPN and PNP transistors for simple interface circuits

Low power dissipation of 150 mW

High collector-emitter breakdown voltage of 50 V

High collector cutoff current of 500 nA

Low VCE saturation voltage of 250 mV at 10 mA collector current

Wide DC current gain range of 20 to 500

Product Advantages

Integrated pre-biased resistors simplify circuit design

Space-saving 5-pin surface mount package

Reliable performance in a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current: 500 nA

VCE Saturation Voltage: 250 mV @ 10 mA

DC Current Gain: 20 to 500

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Compatible with standard surface mount assembly processes

Application Areas

Interface circuits

Logic level translation

Biasing and buffering

Switch and driver circuits

Product Lifecycle

Currently available

No plans for discontinuation

Key Reasons to Choose This Product

Integrated pre-biased resistors for simplified circuit design

Small 5-pin surface mount package for space-constrained applications

Reliable performance with high voltage, current, and gain specifications

RoHS3 compliant for use in a wide range of electronic products

Tape and reel packaging for automated assembly