Manufacturer Part Number
NSVUMC3NT1G
Manufacturer
onsemi
Introduction
Bipolar junction transistor (BJT) array with pre-biasing
Consists of 1 NPN and 1 PNP transistor
Product Features and Performance
Power rating: 150mW
Collector-emitter breakdown voltage: 50V
Collector current (max): 100mA
Collector cutoff current (max): 500nA
Collector-emitter saturation voltage: 250mV @ 10mA, 300μA
DC current gain (hFE): 35 min @ 5mA, 10V
Base resistors: 10kΩ
Product Advantages
Pre-biased transistor pair for simplified biasing
Small footprint surface mount package
Robust performance in a compact design
Key Technical Parameters
Transistor type: 1 NPN, 1 PNP pre-biased (dual)
Package: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 compliant
Compatibility
Can be used in a variety of electronic circuits and applications
Application Areas
Analog and digital circuits
Switches
Amplifiers
Logic gates
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Integrated pre-biased transistor pair for simplified design
Compact surface mount package
Reliable performance within specified parameters
RoHS3 compliance for environmental responsibility