Manufacturer Part Number
NSM80101MT1G
Manufacturer
onsemi
Introduction
The NSM80101MT1G is a high-performance NPN bipolar junction transistor (BJT) with an integrated diode, designed for use in a wide range of electronic applications.
Product Features and Performance
High current capability up to 500mA
Wide operating voltage range up to 80V
Low collector-emitter saturation voltage of 300mV @ 10mA, 100mA
High current gain of 120 min. @ 10mA, 1V
High transition frequency of 150MHz
Compact surface mount package (SC-74)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling and efficiency
High-speed switching and amplification
Versatile for various circuit designs
Reliable performance in harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 500mA
Collector Cutoff Current (Max): 100nA
Power Dissipation: 400mW
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
The NSM80101MT1G can be used in a wide range of electronic applications, including:
Amplifiers
Switches
Drivers
Logic gates
Power supplies
Industrial control systems
Application Areas
Consumer electronics
Industrial automation
Telecommunications equipment
Medical devices
Automotive electronics
Product Lifecycle
The NSM80101MT1G is an active product and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High-performance and reliable transistor for demanding applications
Compact and efficient surface mount package
Wide operating voltage and temperature range
Excellent power handling and switching capabilities
RoHS3 compliance for environmental sustainability
Readily available and supported by the manufacturer
NSM6056MT1GONsemi