Manufacturer Part Number
NSM80100MT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product, Transistors - Bipolar (BJT) - Single
Product Features and Performance
Operating Temperature Range: -55°C to 150°C (TJ)
Power Rating: 270 mW
Collector-Emitter Breakdown Voltage: 80 V (Max)
Collector Current: 500 mA (Max)
Collector Cutoff Current: 100 nA (Max)
Collector-Emitter Saturation Voltage: 250 mV @ 10 mA, 100 mA
DC Current Gain: 120 (Min) @ 10 mA, 1 V
Transition Frequency: 150 MHz
Product Advantages
High power handling capability
Wide operating temperature range
High breakdown voltage
Low saturation voltage
High gain and high frequency performance
Key Technical Parameters
Transistor Type: PNP
Packaging: SC-74, SOT-457
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Power amplifiers
Switching circuits
Audio amplifiers
Industrial controls
Telecommunications equipment
Product Lifecycle
This product is currently in production and available.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Wide operating voltage and temperature range
High gain and high frequency operation
Compact surface mount package
RoHS compliance for environmental friendliness
