Manufacturer Part Number
NJW0302G
Manufacturer
onsemi
Introduction
High-power PNP bipolar junction transistor
Product Features and Performance
High power handling capability up to 150W
High collector-emitter breakdown voltage up to 250V
High collector current up to 15A
Low collector-emitter saturation voltage
High DC current gain up to 75
High transition frequency up to 30MHz
Wide operating temperature range from -65°C to 150°C
Product Advantages
Robust and reliable performance
Efficient power handling
Suitable for high-voltage and high-current applications
Wide range of operating conditions
Key Technical Parameters
Power Rating: 150W
Collector-Emitter Breakdown Voltage: 250V
Collector Current (Max): 15A
Collector Cutoff Current: 10A
Collector-Emitter Saturation Voltage: 1V @ 500mA, 5A
DC Current Gain: 75 @ 3A, 5V
Transition Frequency: 30MHz
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Through-hole mounting
TO-3P-3L package
Application Areas
High-power audio amplifiers
Switching power supplies
Motor drives
Industrial control systems
Automotive electronics
Product Lifecycle
This is an active product, not nearing discontinuation
Replacements and upgrades may be available from onsemi
Key Reasons to Choose This Product
High power handling capability
Excellent voltage and current ratings
Robust and reliable performance
Wide operating temperature range
Suitable for various high-power applications
RoHS3 compliant for environmental safety