Manufacturer Part Number
NJW0281G
Manufacturer
onsemi
Introduction
High-power NPN bipolar junction transistor (BJT)
Product Features and Performance
High power handling capability up to 150W
High voltage rating up to 250V
High current rating up to 15A
High frequency operation up to 30MHz
Robust TO-3P-3L package
Product Advantages
Excellent thermal management
High reliability and durability
Suitable for high-power switching and amplification applications
Key Technical Parameters
Operating temperature range: -65°C to 150°C
Collector-emitter breakdown voltage (max): 250V
Collector current (max): 15A
Collector cutoff current (max): 10A
Collector-emitter saturation voltage (max): 1V @ 500mA, 5A
DC current gain (min): 75 @ 3A, 5V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with standard TO-3P-3 package footprint
Application Areas
High-power switching and amplification circuits
Power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently available
No known discontinuation or replacement plans
Key Reasons to Choose This Product
Excellent power handling capability
High voltage and current ratings
High frequency operation
Robust and reliable package
Suitable for a wide range of high-power applications