Manufacturer Part Number
NJL3281D
Manufacturer
onsemi
Introduction
High-power NPN bipolar junction transistor (BJT)
Product Features and Performance
High power rating of 200 W
High voltage rating of 260 V collector-emitter breakdown voltage
High current rating of 15 A collector current
Product Advantages
Suitable for high-power switching and amplifier applications
High-performance design for efficient power conversion
Reliable operation over wide temperature range of -65°C to 150°C
Key Technical Parameters
Collector-emitter breakdown voltage (max): 260 V
Collector current (max): 15 A
Collector cutoff current (max): 50 A
Collector-emitter saturation voltage (max): 3 V @ 1 A, 10 A
DC current gain (min): 75 @ 5 A, 5 V
Transition frequency: 30 MHz
Quality and Safety Features
RoHS non-compliant
TO-264 package for efficient heat dissipation
Compatibility
Through-hole mounting
Application Areas
High-power switching circuits
Power amplifiers
Power converters
Industrial and automotive electronics
Product Lifecycle
Established product, no indication of discontinuation
Key Reasons to Choose
High power handling capability
Excellent voltage and current ratings
Reliable performance across wide temperature range
Efficient thermal management with TO-264 package
Suitable for various high-power electronic applications
