Manufacturer Part Number
NJL1302DG
Manufacturer
onsemi
Introduction
High-power PNP bipolar transistor with integrated diode
Product Features and Performance
High power handling capability up to 200W
High voltage rating up to 260V
High collector current up to 15A
High collector cutoff current up to 50A
Low collector-emitter saturation voltage of 3V @ 1A, 10A
High DC current gain of 75 @ 5A, 5V
High transition frequency of 30MHz
Wide operating temperature range of -65°C to 150°C
Product Advantages
Excellent power handling capacity
High voltage and current ratings
Low saturation voltage
High current gain
High frequency performance
Wide operating temperature range
Key Technical Parameters
Power Rating: 200W
Collector-Emitter Breakdown Voltage: 260V
Collector Current: 15A
Collector Cutoff Current: 50A
Collector-Emitter Saturation Voltage: 3V @ 1A, 10A
DC Current Gain: 75 @ 5A, 5V
Transition Frequency: 30MHz
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Through-hole mounting
TO-264 package
Application Areas
High-power industrial and automotive applications
Power supplies
Motor drives
Inverters
Welding equipment
Product Lifecycle
This product is currently in active production and readily available.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Excellent power handling capability
High voltage and current ratings
Low saturation voltage for efficient power conversion
High current gain for better control and performance
High frequency operation for high-speed applications
Wide operating temperature range for versatile use
Reliable and robust design for long-term reliability
