NGB18N40CLBT4 - onsemi

Manufacturer Part Number

NGB18N40CLBT4

Manufacturer

onsemi

Introduction

The NGB18N40CLBT4 is a high-performance discrete semiconductor product from onsemi, specifically a single Insulated Gate Bipolar Transistor (IGBT).

Product Features and Performance

High voltage capability up to 430V collector-emitter breakdown voltage

High current handling up to 18A continuous and 50A pulsed collector current

Low on-state voltage drop of 2.5V at 15A collector current and 4V gate-emitter voltage

Wide operating temperature range from -55°C to 175°C junction temperature

115W maximum power dissipation

Product Advantages

Robust and reliable IGBT design

Efficient power conversion and control

Suitable for high-power, high-voltage applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 430V

Collector Current (max): 18A continuous, 50A pulsed

On-state Voltage Drop (max): 2.5V @ 4V, 15A

Operating Temperature Range: -55°C to 175°C

Quality and Safety Features

RoHS non-compliant

Suitable for surface mount applications

Compatibility

DPAK (TO-263-3) package

Compatible with various high-power, high-voltage applications

Application Areas

Industrial motor drives

Power supplies

Inverters

Welding equipment

Other high-power, high-voltage applications

Product Lifecycle

This product is an active part in onsemi's portfolio and not nearing discontinuation.

Replacements or upgrades may be available for this part number.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Efficient power conversion with low on-state voltage drop

Wide operating temperature range for reliability in harsh environments

Robust and reliable IGBT design

Compatibility with various high-power, high-voltage applications