Manufacturer Part Number
NGB15N41ACLT4G
Manufacturer
onsemi
Introduction
IGBT transistor for power electronics applications
Product Features and Performance
High-voltage and high-current capability
Fast switching speed
Low conduction losses
Optimized for high-efficiency power conversion
Product Advantages
Improved energy efficiency
Compact design and high power density
Reliable performance in harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 440V
Collector Current (Max): 15A
Power Dissipation: 107W
Junction Temperature Range: -55°C to 175°C
Quality and Safety Features
Compliant with RoHS3 directive
Robust D2PAK package for high power and rugged applications
Compatibility
Suitable for use in various power electronics circuits and systems
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High efficiency and low losses for improved energy savings
Reliable performance in demanding applications
Compact and robust package design
Wide operating temperature range