Manufacturer Part Number
NDF10N60ZH
Manufacturer
onsemi
Introduction
High-voltage, high-current N-channel MOSFET transistor for power conversion and control applications.
Product Features and Performance
600V drain-source voltage (Vdss)
10A continuous drain current (Id)
Low on-resistance (Rds(on)) of 750mΩ
Fast switching speed with low gate charge (Qg)
Wide operating temperature range of -55°C to 150°C
Suitable for various power conversion and control applications
Product Advantages
Excellent power handling capability
Efficient power conversion with low losses
Reliable operation in harsh environments
Compact and easy to integrate design
Key Technical Parameters
Vdss: 600V
Vgs (Max): ±30V
Rds(on) (Max): 750mΩ @ 5A, 10V
Id (Tc): 10A
Ciss (Max): 1645pF @ 25V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max): 4.5V @ 100A
Qg (Max): 68nC @ 10V
Quality and Safety Features
Robust construction for reliable performance
Complies with relevant safety standards
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Renewable energy systems
Automotive electronics
Product Lifecycle
Currently in production
Replacements or upgrades may become available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Wide operating temperature range for versatile applications
Reliable and robust design for long-term use
Compact and easy to integrate into systems
Cost-effective solution for power conversion and control needs
NDF4115CETC