Manufacturer Part Number
NDF10N60ZG
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single N-Channel MOSFET Transistor
Product Features and Performance
600V Drain to Source Voltage (Vdss)
Maximum Gate-to-Source Voltage (Vgs) of ±30V
On-State Resistance (Rds(on)) of 750mΩ @ 5A, 10V
Continuous Drain Current (Id) of 10A at 25°C
Input Capacitance (Ciss) of 1645pF @ 25V
Maximum Power Dissipation of 39W at 25°C
Product Advantages
High voltage capability
Low on-state resistance
High current handling
Suitable for a wide range of applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Threshold Voltage (Vgs(th)) of 4.5V @ 100A
Drive Voltage Range of 10V
Gate Charge (Qg) of 68nC @ 10V
Quality and Safety Features
Operating Temperature Range: -55°C to 150°C
Robust TO-220FP package
Compatibility
Through-hole mounting
Industry-standard TO-220 package
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial controls
Product Lifecycle
Current production, no known discontinuation
Key Reasons to Choose This Product
High voltage and current capability
Low on-state resistance for improved efficiency
Robust and reliable TO-220FP package
Suitable for a wide range of power electronics applications