NCP3418DR2G - onsemi

Manufacturer Part Number

NCP3418DR2G

Manufacturer

onsemi

Introduction

The NCP3418DR2G is a two-channel, non-inverting, high-side and low-side gate driver designed to drive N-channel power MOSFET or IGBT devices in half-bridge configurations. It features a wide operating voltage range, high-speed switching, and protection circuitry to ensure reliable and efficient power delivery.

Product Features and Performance

Dual-channel gate driver for half-bridge configuration

Wide operating voltage range: 4.6V to 13.2V

High-speed switching with 18ns rise time and 10ns fall time

Support for N-channel MOSFET or IGBT devices

Integrated bootstrap diode for high-side driver

Undervoltage lockout (UVLO) and thermal shutdown protection

Product Advantages

Simplifies the design of half-bridge power conversion circuits

Provides reliable and efficient gate drive for power MOSFETs and IGBTs

Protects the power devices from voltage and thermal overstress

Key Reasons to Choose This Product

Robust and reliable gate driver solution for a wide range of power applications

Optimized for high-speed switching and efficient power delivery

Comprehensive protection features to ensure long-term reliable operation

Compact and easy-to-use surface-mount package

Quality and Safety Features

Designed and manufactured to onsemi's high-quality standards

Integrated protection circuitry to prevent device damage

Compatibility

The NCP3418DR2G is compatible with a variety of N-channel power MOSFET and IGBT devices in half-bridge power conversion applications.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

DC-DC converters

Industrial and automotive power electronics

Product Lifecycle

The NCP3418DR2G is currently in the Obsolete product status. Customers are advised to contact our website's sales team for information on alternative or equivalent products that may be available.