NCP3418BDR2G - onsemi

Manufacturer Part Number

NCP3418BDR2G

Manufacturer

onsemi

Introduction

High-performance power management gate driver for half-bridge applications

Product Features and Performance

Synchronous channel type for efficient operation

Supports two N-Channel MOSFET gate driving

Wide supply voltage range from 4.6V to 13.2V

Logic input thresholds low at 0.8V (VIL) and high at 2V (VIH)

Robust high side voltage handling up to 30V on the bootstrap

Fast switching with typical rise time of 16ns and fall time of 11ns

Capable of operating at high temperatures, up to 150°C (TJ)

Product Advantages

Optimized for compact and efficient system designs

Designed to minimize switching losses in power circuits

Allows for simple logic level control of half-bridge power stages

Key Technical Parameters

Driven Configuration: Half-Bridge

Number of Drivers: 2

Gate Type: N-Channel MOSFET

High Side Voltage - Max (Bootstrap): 30V

Rise / Fall Time (Typ): 16ns / 11ns

Operating Temperature Range: 0°C to 150°C

Quality and Safety Features

Built to handle high thermal and electrical stresses in power applications

Compatibility

Designed for surface mount technology (SMT) with 8-SOIC package compatibility

Application Areas

Power converters, motor drivers, switch-mode power supplies (SMPS)

Product Lifecycle

Obsolete status, implying limited availability and potential need for replacement or upgrade solutions

Several Key Reasons to Choose This Product

Efficient gate driving capability for demanding power applications

Suitable for high performance and high temperature environments

Simple integration with a wide range of power circuit designs

Legacy support for existing systems requiring the NCP3418 series