MUN2233T1G - onsemi

Manufacturer Part Number

MUN2233T1G

Manufacturer

onsemi

Introduction

The MUN2233T1G is a pre-biased NPN bipolar junction transistor (BJT) in a small SC-59 surface mount package.

Product Features and Performance

230 mW power rating

50 V collector-emitter breakdown voltage

100 mA maximum collector current

500 nA maximum collector cutoff current

250 mV maximum collector-emitter saturation voltage

80 minimum DC current gain

7 kΩ base resistor

47 kΩ emitter-base resistor

Product Advantages

Pre-biased for simplified circuit design

Small surface mount package

High breakdown voltage and current capability

Suitable for low-power analog and switching applications

Key Technical Parameters

Power Rating: 230 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV

DC Current Gain (min): 80

Base Resistor: 4.7 kΩ

Emitter-Base Resistor: 47 kΩ

Quality and Safety Features

RoHS3 compliant

Packaged in tape and reel

Compatibility

Suitable for surface mount applications

Application Areas

Low-power analog circuits

Switching applications

General-purpose amplifier and driver circuits

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available

Key Reasons to Choose This Product

Pre-biased for simplified circuit design

Small surface mount package

High breakdown voltage and current capability

Suitable for low-power analog and switching applications

RoHS3 compliant

Readily available in tape and reel packaging