MUN2232T1G - onsemi

Manufacturer Part Number

MUN2232T1G

Manufacturer

onsemi

Introduction

The MUN2232T1G is a pre-biased NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.

Product Features and Performance

338 mW power rating

50 V collector-emitter breakdown voltage

100 mA maximum collector current

500 nA maximum collector cutoff current

250 mV maximum collector-emitter saturation voltage at 1 mA and 10 mA

Minimum DC current gain of 15 at 5 mA and 10 V

Integrated 4.7 kΩ base and emitter-base resistors

Product Advantages

Pre-biased design simplifies circuit design

Surface-mount package for compact integration

Suitable for a wide range of general-purpose amplification and switching applications

Key Technical Parameters

Power Rating: 338 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 1 mA, 10 mA

DC Current Gain: 15 (Min) @ 5 mA, 10 V

Base Resistor: 4.7 kΩ

Emitter-Base Resistor: 4.7 kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for surface-mount assembly

Compatibility

Compatible with a wide range of electronic circuits and systems requiring general-purpose amplification and switching functionality

Application Areas

General-purpose amplification and switching applications

Consumer electronics

Industrial controls

Automotive electronics

Product Lifecycle

Currently in active production

No planned discontinuation or obsolescence

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

Pre-biased design simplifies circuit design

Surface-mount package for compact integration

Suitable for a wide range of general-purpose applications

Robust technical specifications and performance

RoHS3 compliance for environmental and safety considerations

Ongoing product availability and support