MUN2213T1G - onsemi

Manufacturer Part Number

MUN2213T1G

Manufacturer

onsemi

Introduction

The MUN2213T1G is a pre-biased NPN bipolar junction transistor (BJT) designed for use in various electronic circuits and applications.

Product Features and Performance

Operates at a maximum collector-emitter voltage of 50V

Handles a maximum collector current of 100mA

Exhibits a minimum DC current gain (hFE) of 80 at 5mA and 10V

Includes internal base and emitter resistors of 47kΩ each

Low collector cutoff current of 500nA

Compact surface-mount SC-59 (TO-236-3) package

Product Advantages

Pre-biased design simplifies circuit design and reduces component count

Robust performance characteristics suitable for a wide range of applications

Small, space-saving surface-mount package

RoHS3 compliant for environmentally conscious designs

Key Technical Parameters

Power Dissipation: 338mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 300μA, 10mA

DC Current Gain (hFE): Minimum 80 @ 5mA, 10V

Internal Base and Emitter Resistors: 47kΩ each

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Amplifiers

Switches

Logic gates

Biasing circuits

General-purpose electronic control and signal processing

Product Lifecycle

Currently in active production

No plans for discontinuation at this time

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

Integrated pre-biased design for simplified circuit implementation

Robust performance characteristics, including high voltage and current handling

Small, space-saving surface-mount package

Compliance with RoHS3 environmental regulations

Manufactured to high quality standards

Suitable for a wide range of electronic applications