Manufacturer Part Number
MUN2214T1G
Manufacturer
onsemi
Introduction
The MUN2214T1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi. It is designed for use in a variety of electronic circuit applications.
Product Features and Performance
Pre-biased NPN bipolar junction transistor
High voltage and current ratings
Low collector-emitter saturation voltage
High DC current gain
Product Advantages
Simplified circuit design by eliminating external biasing components
Compact surface mount package
Reliable performance in a variety of applications
Key Technical Parameters
Power Rating: 230 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 500 nA
Collector-Emitter Saturation Voltage: 250 mV @ 10 mA
DC Current Gain: 80 min. @ 5 mA, 10 V
Base Resistor: 10 kΩ
Emitter-Base Resistor: 47 kΩ
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (SC-59)
Compatibility
The MUN2214T1G is compatible with a wide range of electronic circuits and applications.
Application Areas
Amplifiers
Switches
Logic circuits
General-purpose electronics
Product Lifecycle
The MUN2214T1G is an active product and is not nearing discontinuation. Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
Simplified circuit design with pre-biased transistor
High performance specifications in a compact package
Reliable and RoHS-compliant for use in various applications
Compatibility with a wide range of electronic circuits