Manufacturer Part Number
MTD6N20ET4G
Manufacturer
onsemi
Introduction
High-performance N-Channel power MOSFET transistor
Product Features and Performance
Optimized for high-frequency switching applications
Robust design for reliable operation
Low on-resistance for improved efficiency
Product Advantages
Excellent power handling capability
High switching speed
Compact surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 700mΩ @ 3A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 480pF @ 25V
Power Dissipation: 1.75W (Ta), 50W (Tc)
Quality and Safety Features
Robust design for reliable operation
Compliance with industry safety standards
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available from the manufacturer
Several Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
High switching speed for high-frequency applications
Compact surface-mount package for space-constrained designs
Reliable and robust design for long-term operation
Wide range of compatible applications