Manufacturer Part Number
MTD6N15T4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor suitable for various power switching applications.
Product Features and Performance
Optimized for high efficiency power conversion
Low on-resistance (RDS(on)) for low conduction losses
Fast switching speed for reduced switching losses
Capable of handling high voltages up to 150V
Supports continuous drain current up to 6A at 25°C
Product Advantages
Excellent thermal management for high power handling
Reliable and robust construction for long lifespan
Compact DPAK package for space-efficient designs
Simple gate drive requirements
Key Technical Parameters
Drain-Source Voltage (VDS): 150V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 300mΩ @ 3A, 10V
Continuous Drain Current (ID): 6A @ 25°C
Input Capacitance (Ciss): 1200pF @ 25V
Power Dissipation: 1.25W (Ta), 20W (Tc)
Quality and Safety Features
Meets industrial-grade reliability standards
Robust electrostatic discharge (ESD) protection
Designed for safe and reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with common gate driver ICs and control circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial control systems
Automotive electronics
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement options and upgrades available if needed
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and long lifespan
Versatile and adaptable to various power applications
Ease of integration and implementation
Comprehensive technical support and resources from the manufacturer
MTD803FMYSON