MTD6N15T4G - onsemi

Manufacturer Part Number

MTD6N15T4G

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET transistor suitable for various power switching applications.

Product Features and Performance

Optimized for high efficiency power conversion

Low on-resistance (RDS(on)) for low conduction losses

Fast switching speed for reduced switching losses

Capable of handling high voltages up to 150V

Supports continuous drain current up to 6A at 25°C

Product Advantages

Excellent thermal management for high power handling

Reliable and robust construction for long lifespan

Compact DPAK package for space-efficient designs

Simple gate drive requirements

Key Technical Parameters

Drain-Source Voltage (VDS): 150V

Gate-Source Voltage (VGS): ±20V

On-Resistance (RDS(on)): 300mΩ @ 3A, 10V

Continuous Drain Current (ID): 6A @ 25°C

Input Capacitance (Ciss): 1200pF @ 25V

Power Dissipation: 1.25W (Ta), 20W (Tc)

Quality and Safety Features

Meets industrial-grade reliability standards

Robust electrostatic discharge (ESD) protection

Designed for safe and reliable operation

Compatibility

Suitable for a wide range of power conversion and control applications

Compatible with common gate driver ICs and control circuits

Application Areas

Switch-mode power supplies

Motor drives

Inverters and converters

Industrial control systems

Automotive electronics

Product Lifecycle

Currently in active production

No immediate plans for discontinuation

Replacement options and upgrades available if needed

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Proven reliability and long lifespan

Versatile and adaptable to various power applications

Ease of integration and implementation

Comprehensive technical support and resources from the manufacturer