MSD42WT1G - onsemi

Manufacturer Part Number

MSD42WT1G

Manufacturer

onsemi

Introduction

The MSD42WT1G is a high-voltage NPN bipolar junction transistor (BJT) in a small SC-70 (SOT-323) surface-mount package.

Product Features and Performance

High voltage operation up to 300V

Low collector-emitter saturation voltage

High current handling up to 150mA

Wide operating temperature range of -55°C to 150°C

Tiny SC-70 (SOT-323) surface-mount package

Product Advantages

Suitable for high-voltage switching and amplifier applications

Excellent thermal performance

Space-saving small package size

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 300V

Collector Current (IC): 150mA

Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 2mA, 20mA

DC Current Gain (hFE): 40 min @ 30mA, 10V

Power Dissipation: 150mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable performance and quality

Compatibility

Suitable for surface-mount applications

Application Areas

High-voltage switching and amplifier circuits

Power supplies

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacements or upgrades may be available in the future.

Key Reasons to Choose This Product

High voltage capability up to 300V

Efficient thermal performance

Compact SC-70 (SOT-323) surface-mount package

Suitable for a wide range of high-voltage applications

Reliable quality and compliance with RoHS3 standards