Manufacturer Part Number
MSD42WT1G
Manufacturer
onsemi
Introduction
The MSD42WT1G is a high-voltage NPN bipolar junction transistor (BJT) in a small SC-70 (SOT-323) surface-mount package.
Product Features and Performance
High voltage operation up to 300V
Low collector-emitter saturation voltage
High current handling up to 150mA
Wide operating temperature range of -55°C to 150°C
Tiny SC-70 (SOT-323) surface-mount package
Product Advantages
Suitable for high-voltage switching and amplifier applications
Excellent thermal performance
Space-saving small package size
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 300V
Collector Current (IC): 150mA
Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 2mA, 20mA
DC Current Gain (hFE): 40 min @ 30mA, 10V
Power Dissipation: 150mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable performance and quality
Compatibility
Suitable for surface-mount applications
Application Areas
High-voltage switching and amplifier circuits
Power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
High voltage capability up to 300V
Efficient thermal performance
Compact SC-70 (SOT-323) surface-mount package
Suitable for a wide range of high-voltage applications
Reliable quality and compliance with RoHS3 standards
MSD50-10MicrosemiIGBT Module
MSD42T1AMI Semiconductor/onsemi