MSD42SWT1G - onsemi

Manufacturer Part Number

MSD42SWT1G

Manufacturer

onsemi

Introduction

This product is a single NPN bipolar junction transistor (BJT) in a small surface mount package.

Product Features and Performance

Operating temperature up to 150°C

Power rating of 150 mW

Collector-emitter breakdown voltage up to 300 V

Collector current up to 150 mA

Collector cutoff current up to 100 nA

Low saturation voltage of 500 mV @ 2 mA, 200 mA

Minimum DC current gain of 25 @ 1 mA, 10 V

Product Advantages

Compact surface mount package

High voltage and current capabilities

Low saturation voltage for efficient operation

Suitable for a wide range of switching and amplification applications

Key Technical Parameters

Package: SC-70, SOT-323

RoHS compliance: RoHS3

Transistor type: NPN

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable performance within the specified operating conditions

Compatibility

This transistor is a commonly used component and is compatible with a wide range of electronic circuits and systems.

Application Areas

Switching circuits

Amplifier circuits

Power control applications

General-purpose electronic devices

Product Lifecycle

This is an active product, and onsemi continues to manufacture and support the MSD42SWT1G. Replacements and upgrades may be available as technology evolves.

Key Reasons to Choose This Product

Compact surface mount package for space-constrained designs

High voltage and current capabilities for versatile applications

Low saturation voltage for efficient operation

Reliable performance within the specified operating conditions

RoHS3 compliance for environmental responsibility