MSB92AWT1G - onsemi

Manufacturer Part Number

MSB92AWT1G

Manufacturer

onsemi

Introduction

This is a high-performance PNP bipolar junction transistor (BJT) suitable for a variety of applications.

Product Features and Performance

Power rating: 150 mW

Collector-emitter breakdown voltage: 300 V

Collector current (max): 500 mA

Collector cutoff current (max): 250 nA

Collector-emitter saturation voltage (max): 500 mV @ 2 mA, 20 mA

DC current gain (min): 120 @ 1 mA, 10 V

Transition frequency: 50 MHz

Product Advantages

High breakdown voltage for improved circuit protection

Low collector cutoff current for reduced leakage

High current gain for efficient amplification

High transition frequency for high-speed switching applications

Key Technical Parameters

Package: SC-70-3 (SOT323)

RoHS compliance: RoHS3

Operating temperature: 150°C (TJ)

Mounting type: Surface mount

Quality and Safety Features

Manufactured to rigorous quality standards

RoHS3 compliant for environmental safety

Suitable for high-temperature applications

Compatibility

This transistor is compatible with a wide range of electronic circuits and can be used as a replacement or upgrade for similar PNP BJT devices.

Application Areas

Amplifiers

Switches

Logic circuits

Power supplies

General-purpose electronics

Product Lifecycle

The MSB92AWT1G is an active, in-production device and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

High breakdown voltage for improved circuit protection

Low collector cutoff current for reduced leakage

High current gain for efficient amplification

High transition frequency for high-speed switching

Compact surface-mount package for space-constrained designs

Manufactured to high-quality standards with RoHS3 compliance

Suitable for a wide range of electronic applications