MSB92ASWT1G - onsemi

Manufacturer Part Number

MSB92ASWT1G

Manufacturer

onsemi

Introduction

High voltage PNP bipolar junction transistor

Product Features and Performance

Designed for high voltage applications

Capable of operating at temperatures up to 150°C

Power handling up to 150mW

Collector-emitter breakdown voltage up to 300V

Collector current up to 500mA

Low collector cutoff current of 250nA

Transition frequency of 50MHz

Product Advantages

Suitable for high voltage circuits

Capable of high temperature operation

Compact surface mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 300V

Current Collector (Ic) (Max): 500mA

Current Collector Cutoff (Max): 250nA

Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V

Frequency Transition: 50MHz

Quality and Safety Features

RoHS3 compliant

Compatibility

SC-70, SOT-323 surface mount package

Application Areas

High voltage circuits

Power supplies

Amplifiers

Switching circuits

Product Lifecycle

Current production, no plans for discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

Suitable for high voltage applications

Capable of high temperature operation

Compact and efficient surface mount package

Reliable and RoHS compliant

Wide range of technical parameters to meet design requirements