Manufacturer Part Number
MMDF3N04HDR2
Manufacturer
onsemi
Introduction
The MMDF3N04HDR2 is a dual N-channel MOSFET transistor device from onsemi.
Product Features and Performance
2 N-Channel MOSFET transistors in a single package
40V Drain-Source Voltage (Vdss)
80mΩ maximum On-Resistance (Rds(on)) at 3.4A, 10V
4A Continuous Drain Current (Id) at 25°C
900pF maximum Input Capacitance (Ciss) at 32V
3V maximum Gate-Source Threshold Voltage (Vgs(th)) at 250μA
28nC maximum Gate Charge (Qg) at 10V
Product Advantages
Logic level gate drive
Compact 8-SOIC surface mount package
Suitable for a variety of power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Continuous Drain Current (Id) @ 25°C: 3.4A
On-Resistance (Rds(on)): 80mΩ @ 3.4A, 10V
Input Capacitance (Ciss): 900pF @ 32V
Gate-Source Threshold Voltage (Vgs(th)): 3V @ 250μA
Gate Charge (Qg): 28nC @ 10V
Quality and Safety Features
RoHS non-compliant
Compatibility
Surface mount 8-SOIC package
Suitable for various power switching applications
Application Areas
Power management
Motor control
Switching power supplies
Industrial automation
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
Dual N-channel MOSFET configuration in a compact package
Low on-resistance and high current capability
Logic level gate drive for easy interfacing
Suitable for a variety of power switching applications
MMDF3207R2GAMI Semiconductor/onsemi