Manufacturer Part Number
MMDF3N04HDR2G
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET Transistor Array
Product Features and Performance
2 N-Channel MOSFET Transistors in a single package
Provides high current handling capability up to 3.4A per channel
Low on-resistance down to 80mOhm
Logic level gate for easy drive
Wide operating temperature range from -55°C to 150°C
Maximum power dissipation of 1.39W
Product Advantages
Compact size in 8-SOIC package
Excellent thermal performance
Reliable and rugged design
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 80mOhm @ 3.4A, 10V
Input Capacitance (Ciss): 900pF @ 32V
Gate Threshold Voltage (Vgs(th)): 3V @ 250μA
Gate Charge (Qg): 28nC @ 10V
Quality and Safety Features
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
Designed and manufactured to high quality standards
Reliable and long-lasting performance
Compatibility
Surface mount package (8-SOIC)
Compatible with a wide range of electronic circuits and systems
Application Areas
Power management circuits
Motor control applications
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
This product is an active and available part from onsemi
Replacement or upgrade options may be available if the product is discontinued in the future
Key Reasons to Choose this Product
High current handling capability up to 3.4A per channel
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Reliable and robust MOSFET technology
Suitable for a variety of power management and control applications
MMDF3301VBSEMI